UCC27211DPRT

Texas Instruments

Texas Instruments UCC27211DPRT, half-bridge N-channel MOSFET gate driver, 4A peak source/sink, 8V~17V supply, 120V bootstrap, 7.2ns rise/5.5ns fall, 10-WSON (4x4) package, -40°C to 140°C.

Texas Instruments UCC27211DPRT
[IN STOCK] In Stock: 21 pcs
$3.48/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27211DPRT specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8V ~ 17V
Logic voltage - VIL, VIH1.3V, 2.7V
High side voltage - max (Bootstrap)120 V
Current - peak output (Source, sink)4A, 4A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case10-WDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)7.2ns, 5.5ns

Technical details

Half-bridge driver with 4 A peak — what the drive current buys you

The Texas Instruments UCC27211DPRT is a high-frequency half-bridge gate driver for N-channel MOSFETs, delivering 4 A peak source and 4 A peak sink current from a single 8 V to 17 V supply rail.

120 V bootstrap rail — where the high side lives

The bootstrap supply on the high side is rated to 120 V maximum.

The input logic thresholds are 1.3 V for VIL and 2.7 V for VIH, so the driver accepts logic directly from a microcontroller or DSP without an external level shifter.

Temperature range — 140°C junction ceiling

The 140°C TJ rating keeps the part inside its SOA without forced airflow.

Sourcing and lifecycle — active production, no LTB signal

UCC27211DPRT
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