Texas Instruments
Texas Instruments UCC27211DPRR, half-bridge gate driver for N-Channel MOSFETs, 4A peak source/sink, 7.2ns rise/5.5ns fall, 120V bootstrap max, 10-WSON (4x4) package, -40°C to 140°C junction.
MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Gate type | N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Supply voltage | 8V ~ 17V |
| Logic voltage - VIL, VIH | 1.3V, 2.7V |
| High side voltage - max (Bootstrap) | 120 V |
| Current - peak output (Source, sink) | 4A, 4A |
| Operating temperature | -40°C~140°C(TJ) |
| Package | Tape & Reel (TR) |
| Case | 10-WDFN Exposed Pad |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 7.2ns, 5.5ns |
The UCC27211DPRR: Rated 4A peak source and 4A peak sink, this driver can charge and discharge the gate capacitance of a large N-Channel MOSFET or GaN FET in the half-bridge leg without excessive switching loss. The 7.2 ns typical rise and 5.5 ns fall times keep the dead-time window tight, reducing shoot-through current in the bridge. The 120 V bootstrap supply maximum sets the high-side rail ceiling.
Supply voltage range is 8 V to 17 V.