Texas Instruments UCC27211DPRR, half-bridge gate driver for N-Channel MOSFETs, 4A peak source/sink, 7.2ns rise/5.5ns fall, 120V bootstrap max, 10-WSON (4x4) package, -40°C to 140°C junction.
| Parameter | Value |
|---|---|
| Gate type | N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Supply voltage | 8V ~ 17V |
| Logic voltage - VIL, VIH | 1.3V, 2.7V |
| High side voltage - max (Bootstrap) | 120 V |
| Current - peak output (Source, sink) | 4A, 4A |
| Operating temperature | -40°C~140°C(TJ) |
| Package | Tape & Reel (TR) |
| Case | 10-WDFN Exposed Pad |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 7.2ns, 5.5ns |
The UCC27211DPRR: Rated 4A peak source and 4A peak sink, this driver can charge and discharge the gate capacitance of a large N-Channel MOSFET or GaN FET in the half-bridge leg without excessive switching loss. The 7.2 ns typical rise and 5.5 ns fall times keep the dead-time window tight, reducing shoot-through current in the bridge. The 120 V bootstrap supply maximum sets the high-side rail ceiling.
Supply voltage range is 8 V to 17 V.
Designers need pinout to layout the PCB and ensure correct connections.
Buyers need pricing for BOM cost estimation and budget approval.
Sourcing engineers must confirm lifecycle to avoid last-time buy issues.
Immediate sourcing requires distributor stock to meet production deadlines.
Engineers comparing parts need to know packaging and performance variations.
All buyers need the datasheet to verify electrical characteristics and pinout.