UCC27211DDAR

Texas Instruments

Texas Instruments UCC27211DDAR, half-bridge gate driver, N-Channel MOSFET, 4A peak source/sink, 7.2ns rise / 5.5ns fall, 120V bootstrap max, 8-SO PowerPad, -40°C to 140°C.

Texas Instruments UCC27211DDAR
[IN STOCK] In Stock: 151 pcs
$3.16/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27211DDAR specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8V ~ 17V
Logic voltage - VIL, VIH1.3V, 2.8V
High side voltage - max (Bootstrap)120 V
Current - peak output (Source, sink)4A, 4A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-PowerSOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)7.2ns, 5.5ns

Technical details

Half-bridge driver for 48–100 V bus rails

The Texas Instruments UCC27211DDAR is a high-frequency half-bridge gate driver rated for N-Channel MOSFETs, delivering 4A peak source and 4A peak sink current with a typical rise time of 7.2 ns and fall time of 5.5 ns. Its bootstrap supply handles up to 120 V on the high-side, suiting DC-link rails in motor drives, battery chargers, and DC-DC converters. The two independent, non-inverting channels allow flexible phase-leg control without cross-conduction delays.

Thermal and supply headroom for industrial power stages

Operating junction temperature spans -40°C to 140°C, useful when the driver sits next to hot MOSFETs on a cramped power-stage PCB.

8-SO PowerPad — thermal relief without a heatsink

Surface-mount assembly with the PowerPad requires a soldered thermal-land pattern on the PCB; the datasheet layout recommendation should be followed to keep junction temperature below the 140°C limit.

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