UCC27201DRMR

Texas Instruments

Texas Instruments UCC27201DRMR, half-bridge gate driver, N-Channel MOSFET, 3A peak source/sink, 8ns rise/7ns fall, 120V bootstrap max, 8V to 17V supply, -40°C to 140°C junction, 8-VSON (4x4) package.

Texas Instruments UCC27201DRMR
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27201DRMR specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8V ~ 17V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)120 V
Current - peak output (Source, sink)3A, 3A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-VDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)8ns, 7ns

Technical details

Half-bridge gate driver with 3 A peak drive and 120 V bootstrap ceiling

The Texas Instruments UCC27201DRMR is a high-frequency half-bridge gate driver designed for N-channel MOSFETs in synchronous buck, full-bridge, and motor-drive stages. The bootstrap supply supports a high-side voltage up to 120 V, suiting it for 48 V to 72 V bus architectures common in telecom rectifiers, battery-powered traction inverters, and industrial power supplies. The two driver channels are independent with non-inverting inputs, so the same part handles both high-side and low-side FETs without external level shifting.

Supply range, logic thresholds, and temperature grade

The driver operates from an 8 V to 17 V bias supply, covering the 12 V rail typical in industrial control and automotive auxiliary systems. In a motor-drive or power-supply environment where ambient may reach 85°C, the 140°C junction ceiling provides headroom for self-heating from the 3 A gate charge pulses.

Package, footprint, and sourcing posture

The UCC27201DRMR is supplied in an 8-VDFN exposed-pad package (8-VSON, 4x4 mm).

UCC27201DRMR
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