UCC27201DR

Texas Instruments

Texas Instruments UCC27201DR, half-bridge gate driver, 3A peak source/sink, 8V to 17V supply, 8ns/7ns rise/fall, independent channels, non-inverting, 8-SOIC surface mount, -40°C to 140°C junction temperature.

UCC27201DR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27201DR specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8V ~ 17V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)120 V
Current - peak output (Source, sink)3A, 3A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)8ns, 7ns

Technical details

3A peak drive in an 8-SOIC — what it means on site

That drive strength is enough to switch the gate capacitance of a TO-220 or D2PAK power MOSFET in the tens-of-nanoseconds range — 8 ns typical rise, 7 ns typical fall — without needing an external booster stage. It runs from a single 8V to 17V supply, so a standard 12V rail (with its ±10% tolerance) lands right in the sweet spot.

Half-bridge topology, independent channels

The driven configuration is half-bridge — one high-side and one low-side output — with independent channel control. The high-side bootstrap supply is rated to 120 V maximum, which covers most 48V, 72V, and 100V bus applications. Input logic thresholds are 0.8V (VIL) and 2.5V (VIH), compatible with 3.3V and 5V PWM signals from a microcontroller or DSP. The non-inverting input type means the output follows the input polarity — no inversion stage to account for in the control loop.

Temperature grade and enclosure fit

That matters when a drive goes down on a production line and the spare kit has a soldering iron and a roll of solder wick.

UCC27201DR
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