TLV9002SIYCKR

Texas Instruments

Texas Instruments TLV9002SIYCKR dual CMOS operational amplifier, 1 MHz gain bandwidth, 2 V/µs slew rate, rail-to-rail output, 60 µA supply per channel, 9-DSBGA package.

Texas Instruments TLV9002SIYCKR
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TLV9002SIYCKR specifications
Parameter / AttributeSpecification / Value
Output typeRail-to-Rail
MountingSurface Mount
Amplifier typeCMOS
Voltage - input offset400 µV
Voltage - supply span5.5 V
Current - supply60µA (x2 Channels)
Current - input bias5 pA
Current - output (Channel)40 mA
Operating temperature-40°C ~ 125°C (TA)
Gain bandwidth product1 MHz
PackageTape & Reel (TR) Cut Tape (CT)
Slew rate2V/µs
Case9-BGA, DSBGA
Number of circuits2

Technical details

Dual CMOS op-amp for low-power signal chains

The TLV9002SIYCKR is a dual-channel CMOS operational amplifier from Texas Instruments, offering a gain-bandwidth product of 1 MHz and a slew rate of 2 V/µs. Each channel draws only 60 µA of supply current, making it suited for battery-operated or power-constrained analog front-ends.

Housed in a 9-ball DSBGA measuring 1 x 1 mm, the package is a wafer-level chip-scale form factor. The 0.50 mm pitch demands a PCB with fine-line capability and a solder-mask-defined pad layout per TI's land pattern recommendation. The input bias current is 5 pA typical, which is negligible for high-impedance sensor interfaces — a photodiode or pH probe front-end will not see offset drift from the bias current.

TLV9002SIYCKR
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