16 KB FRAM — no erase cycles, no wear-leveling tax
The MSP430FR5736IRGER: Its program memory is 16 KB of FRAM — ferroelectric RAM that combines the non-volatility of Flash with the byte-addressable, fast-write speed of SRAM. No erase-before-write, no sector boundaries to manage, and endurance rated far beyond typical Flash. For a firmware engineer, this means you can treat the whole 16 KB as a unified code-plus-data space: log sensor readings, update calibration constants, or stage an OTA image without a separate EEPROM or wear-leveling scheme. The 1 KB of conventional SRAM handles stack and scratchpad.
Industrial temp and wide supply — one battery, no regulator
The supply voltage spans 2V to 3.6V, so a single Li-ion cell (3.0V to 3.6V) or two alkaline cells (2.0V to 3.0V) can power it directly — no LDO needed.
24-VQFN with exposed pad — depot-level repair only
The 24-VQFN package (4x4 mm, exposed pad) is a surface-mount part with a central thermal pad that needs a hot-air station or reflow oven to remove and replace.
TI lists the MSP430FR5736IRGER as Active. No end-of-life notice, no last-time-buy deadline.