Active production — sourcing for the BOM
The LM5111-4MY/NOPB: ROHS3 compliant, so no exemption sunset risk for EU-regulated markets.
Output current and switching speed — what drives the MOSFET
Rated for 3 A peak source and 5 A peak sink, this driver handles the gate charge of moderate-sized N-channel MOSFETs in low-side configurations — think a 30–60 nC Qg FET switching at 100–200 kHz without the driver running out of steam. Typical rise time of 14 ns and fall time of 12 ns (into a specified load) set the edge rate; faster edges reduce switching loss but increase radiated EMI, so the board layout and gate resistor need to match the target noise budget. Supply range from 3.5 V to 14 V covers both 5 V and 12 V bias rails common in industrial power supplies and motor-drive control circuits.
Dual independent low-side channels
Two independent drivers with separate inputs — one inverting, one non-inverting — allow driving two low-side FETs from a single package, useful in synchronous buck converters or dual-FET load switches.
Rated for junction temperatures from -40°C to 125°C, placing it in the industrial operating band — suitable for motor drives, server PSUs, and outdoor telecom equipment where the ambient inside the enclosure can hit 85°C.