Dual low-side driver for N-channel MOSFET switching
The LM5111-3M: Each channel delivers 3 A peak source and 5 A peak sink current, which translates to fast gate charge and discharge times for the MOSFET's input capacitance — the 14 ns typical rise and 12 ns typical fall time keep switching losses low at frequencies where a weaker driver would spend too long in the linear region. The two channels are independent, meaning they can drive separate MOSFETs in a dual-switch topology (e.g., two separate buck converters) or the high-side and low-side of a half-bridge when combined with a bootstrap supply. Each channel provides both inverting and non-inverting inputs, so the same part handles either polarity without an external inverter gate.
Supply range and logic thresholds
Operating from a 3.5 V to 14 V supply rail, the driver covers the common gate drive voltages for 5 V and 12 V biased MOSFETs. This simplifies the interface between the control IC and the power stage. The 8-SOIC package with 0.154-inch body width fits a standard surface-mount footprint, and the Bulk packaging means it ships in tubes or trays rather than tape-and-reel — a detail to confirm with the pick-and-place feeder setup.