Gate drive parametrics for the switching stage
The Texas Instruments LM5111-1M is a dual low-side gate driver designed to drive N-channel MOSFETs. Each channel delivers 3 A peak source and 5 A peak sink current, which means the driver can charge and discharge the gate capacitance of a power MOSFET quickly enough to keep switching losses within budget at moderate frequencies. Typical rise and fall times are 14 ns and 12 ns respectively, driven into a specified load. This edge rate, combined with the 3.5 V to 14 V supply range, covers the gate-drive voltage for most 5 V and 12 V logic rails and the corresponding MOSFET threshold windows.
The part is RoHS non-compliant per the current listing, which is a consideration for BOMs that require full RoHS exemption documentation.