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Texas Instruments LM5110-2MX/NOPB — Analog & Data Acquisition
Texas Instruments

LM5110-2MX/NOPB Low-Side Gate Driver, 3A/5A Peak, 8-SOIC

MPNLM5110-2MX/NOPB
End of Life

Texas Instruments LM5110-2MX/NOPB, dual low-side N-channel MOSFET gate driver, inverting input, independent channels, 3A source / 5A sink peak output, 14ns rise / 12ns fall typ, 3.5V–14V supply, -40°C to 125°C, 8-SOIC package.

$2.56Ref. price · indicative, final on quote
LM5110-2MX/NOPB datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

LM5110-2MX/NOPB Technical Specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeInverting
Channel typeIndependent
Mounting typeSurface Mount
Voltage3.5V ~ 14V
Logic voltage - VIL, VIH0.8V, 2.2V
Current - peak output (Source, sink)3A, 5A
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)14ns, 12ns

Product details

Dual low-side driver for N-channel MOSFETs

The Texas Instruments LM5110-2MX/NOPB is a dual low-side gate driver for N-channel MOSFETs. It delivers a peak output current of 3 A source and 5 A sink, with typical rise and fall times of 14 ns and 12 ns respectively.

Logic interface and supply rail

The inverting input means a logic high on the input pulls the gate low. That's the opposite of a non-inverting driver — if your controller outputs active-high PWM, you'll need to invert the signal in firmware or add a logic inverter.

Lifecycle and sourcing

The LM5110-2MX/NOPB is listed as Active with ROHS3 compliance.

Frequently asked questions

Can LM5110-2MX/NOPB drive IGBTs or SiC MOSFETs?

The LM5110-2MX/NOPB is specified for N-channel MOSFETs with a low-side driven configuration. The 5 A sink peak and 14 V maximum supply are within the range needed for many IGBT modules, but the inverting input and independent channel architecture may not suit every IGBT gate drive requirement. For SiC MOSFETs, the 14 V supply maximum is below the typical 18–20 V bias used for SiC drivers — check the specific SiC device's gate drive voltage range before fitting this part.

What is the rise/fall time of LM5110-2MX/NOPB?

Typical rise time is 14 ns and fall time is 12 ns. These are typical values at a specified load capacitance — actual edge rates scale with the gate charge of the driven MOSFET.

What is the closest functional equivalent to LM5110-2MX/NOPB?

The LM5106MM/NOPB is a half-bridge driver with non-inverting input and synchronous channel type, rated for 1.2 A peak output and 8 V supply typical. It is not a direct pin-compatible replacement — the LM5110-2MX/NOPB offers higher peak current (3 A / 5 A) and independent low-side channels. For a drop-in second source, verify the pinout and logic polarity against your layout.

Can LM5110-2MX/NOPB be used as a high-side driver?

No — the driven configuration is low-side only. The LM5110-2MX/NOPB drives the gate referenced to ground, not to a floating bootstrap supply. For high-side drive, look at a half-bridge or high-side driver such as the LM5106.