Half-bridge driver for N-channel MOSFETs
It delivers 1A peak source and sink current with 15ns rise and fall time. The bootstrap supply handles up to 108 V on the high side.
Bootstrap voltage and external diode
The high-side driver uses a bootstrap technique requiring an external diode and capacitor between the VDD and HB pins. The maximum bootstrap voltage is 108 V.
Logic input compatibility
Logic input thresholds are 0.8 V for VIL and 2.2 V for VIH. The inputs are non-inverting and independent per channel.
No internal deadtime
The LM5109BSD/NOPB does not include internal deadtime. The two driver channels are independent, so shoot-through prevention relies on external deadtime inserted in the PWM signals. For motor drive or synchronous buck applications, the controller or MCU must ensure complementary switching with a deadtime interval appropriate for the MOSFET gate charge and load current.
The device is housed in an 8-WSON (4x4 mm) exposed pad package.
No last-time-buy or end-of-life notice applies. ROHS3 compliant.