LM5106MM/NOPB

Texas Instruments

Texas Instruments LM5106MM/NOPB, half-bridge gate driver, N-Channel MOSFET, non-inverting input, synchronous channel, 8V~14V supply, 1.2A source / 1.8A sink peak output, 118V bootstrap, 10-VSSOP package, -40°C to 125°C.

Texas Instruments LM5106MM/NOPB
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

LM5106MM/NOPB specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
MountingSurface Mount
Supply voltage8V ~ 14V
Logic voltage - VIL, VIH0.8V, 2.2V
High side voltage - max (Bootstrap)118 V
Current - peak output (Source, sink)1.2A, 1.8A
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case10-TFSOP, 10-MSOP (0.118\", 3.00mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)15ns, 10ns

Technical details

Half-bridge gate driver for N-channel MOSFETs

It accepts a non-inverting input and operates from an 8 V to 14 V supply, with a bootstrap high-side voltage rating up to 118 V. The driver delivers 1.2 A peak source and 1.8 A peak sink current, with typical 15 ns rise and 10 ns fall times.

Gate drive strength and switching speed

With 1.2 A source and 1.8 A sink peak current, the LM5106MM/NOPB can charge and discharge the gate capacitance of medium-power MOSFETs quickly. The 15 ns rise and 10 ns fall times (typical) keep switching losses low.

Package and thermal environment

Surface-mount assembly aligns with standard reflow profiles; the tape-and-reel option supports volume pick-and-place.

It is a current-design-in part with no end-of-life notice.

LM5106MM/NOPB
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