Half-bridge driver for N-channel MOSFETs — 1.6 A peak, 118 V bootstrap
The LM5102SD is a Texas Instruments half-bridge gate driver built for driving two N-channel MOSFETs in a high-side/low-side configuration. It delivers 1.6 A peak source and 1.6 A peak sink current, which is enough to charge and discharge the gate capacitance of medium-power MOSFETs in a 600 ns typical rise/fall time. The bootstrap supply on the high side handles up to 118 V, so this part fits into 48 V or 72 V bus systems, or even lower-voltage battery stacks, without needing a separate isolated supply for the top FET. Supply range is 9 V to 14 V, which aligns with standard 12 V bias rails common in industrial and automotive auxiliary supplies.
Package and thermal — 10-WSON with exposed pad
The LM5102SD comes in a 10-WDFN package with an exposed pad (supplier device package 10-WSON 4x4 mm). The 600 ns rise/fall time means the switching losses are moderate, but the thermal pad is still essential if the driver is running at high frequency or driving a large gate charge. The two driver channels are independent, so the low-side and high-side outputs can be controlled separately. The non-inverting input type means the output follows the input logic level — no inversion to confuse the timing when pairing with a PWM controller.