Half-bridge gate driver for N-channel MOSFETs
It delivers a peak output current of 3A for both source and sink, which means it can charge and discharge the gate capacitance of medium-power MOSFETs quickly, reducing switching losses in a 9V to 14V supply rail. The independent channel architecture lets the high-side and low-side drivers operate with separate timing, useful for dead-time control in synchronous buck converters or full-bridge topologies.
Thermal and package considerations for layout
Bootstrap supply and high-side voltage headroom
The high-side driver uses a bootstrap supply, with a maximum bootstrap voltage of 118 V. This sets the ceiling for the DC bus voltage in the half-bridge.
It is ROHS3 compliant. There is no LTB risk, and the part remains eligible for new designs.