LM5100AMRX/NOPB

Texas Instruments

Texas Instruments LM5100AMRX/NOPB, half-bridge gate driver, N-Channel MOSFET, 3A peak source/sink, 9V-14V supply, 118V bootstrap, 8-PowerSOIC, -40 to 125°C.

Texas Instruments LM5100AMRX/NOPB
Download datasheet (PDF)
[IN STOCK] In Stock: 11 pcs
$6.92/ pc

Volume pricing

Buy Now

MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

LM5100AMRX/NOPB specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage9V ~ 14V
Logic voltage - VIL, VIH2.3V, -
High side voltage - max (Bootstrap)118 V
Current - peak output (Source, sink)3A, 3A
Operating temperature-40°C ~ 125°C (TJ)
PackageBulk
Case8-PowerSOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)430ns, 260ns

Technical details

Half-bridge driver for 3A-class N-Channel stages

The Texas Instruments LM5100AMRX/NOPB is a high-voltage half-bridge gate driver designed to drive two N-Channel MOSFETs in an independent-channel configuration. It delivers a peak output current of 3A source and 3A sink, making it suited for medium-power DC-DC converters, motor drive inverter stages, and class-D audio amplifiers where the bootstrap supply can reach up to 118 V.

Switching speed and dead-time planning

Typical rise time of 430 ns and fall time of 260 ns. The 3A peak drive provides gate charge delivery for larger-die MOSFETs.

Housed in an 8-PowerSOIC package (0.154" body width, 3.90 mm) with an exposed PowerPad on the underside. The PowerPad must be soldered to a suitable copper plane on the PCB for thermal relief.

LM5100AMRX/NOPB
[ALLOC] verified
Quote