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LM2904LVIDR

LM2904LVIDR Dual Op-Amp, 90 µA Supply, 1 MHz GBW

MPNLM2904LVIDR
Active

Texas Instruments LM2904LVIDR, dual general-purpose CMOS op-amp, 1 MHz gain bandwidth, 1.5 V/µs slew rate, 90 µA supply per channel, 2.7 V to 5.5 V supply range, -40 to 125°C, 8-SOIC package, Tape & Reel.

$0.1027Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

LM2904LVIDR specifications
ParameterValue
MountingSurface Mount
Amplifier typeGeneral Purpose
Voltage - input offset1 mV
Voltage - supply span5.5 V
Current - supply90µA (x2 Channels)
Current - input bias15 pA
Current - output (Channel)40 mA
Operating temperature-40°C~125°C(TA)
Gain bandwidth product1 MHz
PackageTape & Reel (TR); Cut Tape (CT)
Slew rate1.5V/µs
Case8-SOIC (0.154\", 3.90mm Width)
Number of circuits2

Product details

Low-power dual op-amp for industrial sensor conditioning

The 'LVI' suffix in the order code signals this lower-supply variant of the standard LM2904 family. The 15 pA input bias current — typical of a CMOS input stage — avoids the voltage-offset errors that a bipolar-input op-amp would create when driving high source impedances.

Industrial temperature grade and operating envelope

The 1 mV typical input offset voltage keeps the DC error budget tight for precision loops.

Frequently asked questions

What is the supply current of LM2904LVIDR?

The LM2904LVIDR draws 90 µA per channel of quiescent supply current, for a total of 180 µA for both amplifiers at no load.

What is the gain bandwidth product of LM2904LVIDR?

This combination supports signal bandwidths up to roughly 100 kHz in closed-loop gain configurations.

Can LM2904LVIDR be used as a replacement for standard LM2904?

Yes, the LM2904LVIDR is pin-compatible with the standard bipolar LM2904 in the same 8-SOIC package. The key difference is the CMOS input stage: the LVIDR draws lower supply current (90 µA vs ~500 µA per channel) and has much lower input bias current (15 pA vs ~100 nA), which is beneficial for high-impedance sensors.