Half-bridge driver for N-channel MOSFETs — 3 A peak and 100 V bootstrap ceiling
The LM25101ASD-1/NOPB is a half-bridge gate driver from Texas Instruments designed to drive two N-channel MOSFETs in an independent, non-inverting configuration. The 3 A peak source and 3 A peak sink current means it can charge and discharge the gate capacitance of medium-power MOSFETs quickly, which directly sets the switching transition time and the dead-time you need to budget in the PWM scheme. The bootstrap high-side supply is rated to 100 V maximum, so the driver supports bus voltages up to that ceiling. The 9 V to 14 V supply range is the bias rail for the low-side and the bootstrap charging circuit — it must stay within that window for the undervoltage lockout to release. Layout the decoupling capacitors close to the VDD and HB pins — the 3 A transient draw on each switching edge demands a low-inductance loop.
430 ns rise, 260 ns fall — typical timing and what it means for dead-time
The typical rise time is 430 ns and fall time is 260 ns driving the rated load. These are typical values, not maximums — the actual transition time depends on the total gate charge of the external MOSFET and the drive loop impedance. Budget dead-time in the controller firmware at least 2× the rise time to avoid shoot-through during the bootstrap refresh cycle. The 125°C junction limit means the thermal resistance of the exposed-pad solder joint to the board must be kept under ~40°C/W for a 3 A switching application at full bus voltage.
Active lifecycle and compliance — no EOL watch needed
For volume production, the reel quantity is the standard procurement unit; cut-tape samples are available for prototyping.