5700 Vrms reinforced isolation for automotive power trains
It delivers 5700 Vrms isolation in a 16-SOIC wide-body package, with a 100 Mbps data rate and 85 kV/µs common-mode transient immunity.
85 kV/µs CMTI — why it matters for GaN and SiC gate drives
In a half-bridge gate-drive isolation stage, fast-switching GaN or SiC FETs generate common-mode voltage transients that can corrupt the data stream. A CMTI below 50 kV/µs risks bit errors at switching edges. The 85 kV/µs rating provides margin for 100 V/ns slew rates typical of 650 V GaN devices.
This part is qualified for new design-ins and volume production without supply discontinuity risk.
3/1 channel direction — three forward, one reverse
The channel configuration is 3 inputs on side 1, 1 input on side 2. This suits a typical SPI isolation interface: three forward channels (SCLK, MOSI, CS) and one reverse channel (MISO). The unidirectional architecture avoids the dead-time and direction-control overhead of bidirectional isolators.