Texas Instruments NexFET™ series, CSD87352Q5D, dual N-channel MOSFET, 30V Vdss, 25A Id, 8.5W max, 8-PowerLDFN package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 25A |
| Power - max | 8.5W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 1.15V @ 250µA |
| Gate charge (Qg) (Max) @ vgs | 12.5nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 1800pF @ 15V |
The 8-PowerLDFN package has an exposed pad; the datasheet layout recommends a 4x4 mm thermal land with multiple vias to the ground plane.
No end-of-life notices are on record, so it is safe to qualify into new BOMs.
No direct pin-compatible replacement is listed. Other NexFET devices in the 5x6 LSON package share the footprint but differ in current rating — verify the 25A specification when selecting an alternate.