Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ CSD87330Q3D, dual 2 N-Channel half-bridge MOSFET, 30V Vdss, 20A continuous drain at 25°C, logic-level gate, 5.8nC gate charge at 4.5V, surface-mount 8-PowerLDFN (8-LSON 3.3x3.3) package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 N-Channel (Half Bridge) |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 20A |
| Power - max | 6W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 2.1V @ 250µA |
| Gate charge (Qg) (Max) @ vgs | 5.8nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 900pF @ 15V |
Rated for junction temperature from -55°C to 150°C, this part suits harsh environments: under-hood automotive, industrial motor drives, outdoor telecom rectifiers, and avionics auxiliary power supplies. The 6W maximum power dissipation is a package-level limit; real-world dissipation depends on PCB copper area and airflow.
The CSD87330Q3D is an active, current-production part (ROHS3 compliant).
