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Texas Instruments CSD87313DMST

CSD87313DMST NexFET Dual N-Channel MOSFET, 30 V, 2.7 W

MPNCSD87313DMST
End of Life

Texas Instruments NexFET™ series, CSD87313DMST, dual N-channel common-drain MOSFET, 30 V drain-to-source voltage, 2.7 W max power, 28 nC gate charge at 4.5 V, 8-WSON (3.3x3.3) package, surface mount, -55°C to 150°C junction temperature.

$2.27Ref. price · indicative, final on quote
Packaging8-PowerWDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CSD87313DMST Technical Specifications
ParameterValue
SeriesNexFET™
FET type2 N-Channel (Dual) Common Drain
Mounting typeSurface Mount
Drain to source voltage30V
Power - max2.7W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerWDFN
Vgs(th) (Max) @ id1.2V @ 250µA
Gate charge (Qg) (Max) @ vgs28nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds4290pF @ 15V

Product details

Gate charge and input capacitance — drive budget

With a maximum gate charge of 28 nC at 4.5 V and input capacitance of 4290 pF at 15 V drain-source, the CSD87313DMST can be driven directly from a 5 V or 3.3 V PWM controller without an external gate driver, saving board space and BOM cost. The 1.2 V maximum gate threshold at 250 µA ensures the device turns on cleanly with logic-level drive signals, even at low temperature.

Thermal and temperature range

The 2.7 W power dissipation ceiling in the 8-WSON package means the PCB copper area under the package must be sized to keep the junction below 150°C at full load.

Frequently asked questions

What is the difference between CSD87313DMST and CSD87313DMT?

The electrical specifications are identical.