Texas Instruments NexFET™ series, CSD87313DMST, dual N-channel common-drain MOSFET, 30 V drain-to-source voltage, 2.7 W max power, 28 nC gate charge at 4.5 V, 8-WSON (3.3x3.3) package, surface mount, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 N-Channel (Dual) Common Drain |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Power - max | 2.7W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Gate charge (Qg) (Max) @ vgs | 28nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 4290pF @ 15V |
With a maximum gate charge of 28 nC at 4.5 V and input capacitance of 4290 pF at 15 V drain-source, the CSD87313DMST can be driven directly from a 5 V or 3.3 V PWM controller without an external gate driver, saving board space and BOM cost. The 1.2 V maximum gate threshold at 250 µA ensures the device turns on cleanly with logic-level drive signals, even at low temperature.
The electrical specifications are identical.