Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ series, CSD86350Q5D, dual N-channel half-bridge MOSFET, 25V Vdss, 40A continuous drain, 6mOhm Rds(on) at 8V, logic-level gate, 8-PowerLDFN (5x6) package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 N-Channel (Half Bridge) |
| Mounting | Surface Mount |
| Drain to source voltage | 25V |
| Current - continuous drain (Id) @ 25°C | 40A |
| Power - max | 13W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 2.1V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 20A, 8V |
| Gate charge (Qg) (Max) @ vgs | 10.7nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 1870pF @ 12.5V |
Typical applications include synchronous buck converters for point-of-load regulation in networking, telecom, and computing equipment, as well as motor-drive half-bridge stages in industrial and automotive systems. The -55°C to 150°C junction temperature range covers under-hood automotive and factory-floor thermal cycling.
There is no end-of-life notice or last-time-buy risk for new designs.