Texas Instruments NexFET™ CSD85302L, dual N-channel common-drain MOSFET, 20V Vds, 5A Id, 1.7W, 7.8nC gate charge, -55°C to 150°C, 4-Picostar (1.31x1.31) package.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 N-Channel (Dual) Common Drain |
| Mounting | Surface Mount |
| Power - max | 1.7W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 4-XFLGA |
| Gate charge (Qg) (Max) @ vgs | 7.8nC @ 4.5V |
With a maximum gate charge of 7.8 nC at 4.5V Vgs, this MOSFET keeps driver losses low in high-frequency switching applications. The low Qg means the gate driver can charge and discharge the gate quickly, reducing transition losses in synchronous rectifiers or load switches running at several hundred kilohertz.
The CSD85302L is listed as Active on the manufacturer's lifecycle status, with ROHS3 compliance.
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