At 1 A and 4.5 V gate drive, the 68 mOhm max Rds(on) translates to about 68 mV drop and 68 mW dissipation per channel. That is low enough for most portable load-switching and power-rail sequencing applications without a heatsink — the 750 mW package limit gives you headroom if both channels are on simultaneously. Input capacitance is 410 pF at 10 V Vds, so switching losses stay modest even at a few hundred kHz.
CSD75208W1015
Texas Instruments · NexFET™ Series
Texas Instruments NexFET™, CSD75208W1015, Dual P-Channel Common Source MOSFET, 20V Vdss, 1.6A Id, 68mOhm Rds(on) at 4.5V, 750mW, 6-DSBGA (1x1.5mm), -55 to 150°C.
[IN STOCK] In Stock: 100 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | 2 P-Channel (Dual) Common Source |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 1.6A |
| Power - max | 750mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 6-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 68mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 2.5nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 410pF @ 10V |
Technical details
CSD75208W1015
[ALLOC] verified