Texas Instruments FemtoFET™ series, CSD25481F4T, P-Channel MOSFET, 20V Vdss, 2.5A continuous drain, 88mOhm Rds(on) at 500mA/8V, 0.91nC gate charge, 3-PICOSTAR surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | FemtoFET™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.5A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XFDFN |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 88mOhm @ 500mA, 8V |
| Gate charge (Qg) (Max) @ vgs | 0.91 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 189 pF @ 10 V |
The 88 mOhm Rds(on) at 500 mA and 8 V is the figure to use for steady-state conduction loss calculations. At lower gate drive voltages — 1.8 V or 4.5 V — the on-resistance will be higher.
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