Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ series, CSD25310Q2T, P-Channel MOSFET, 20 V Vdss, 20 A Id, 23.9 mOhm Rds(on) @ 5 A, 4.5 V, 6-WSON (2x2) package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 20A (Ta) |
| Power dissipation | 2.9W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 23.9mOhm @ 5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 4.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 655 pF @ 10 V |
Gate charge is 4.7 nC at 4.5 V, and input capacitance (Ciss) is 655 pF at 10 V drain-source. These numbers tell you the driver doesn't need to push much charge per cycle — a small gate-drive IC or a GPIO with a series resistor can handle the switching. The drive voltage range for rated Rds(on) is 1.8 V to 4.5 V, so it works with 1.8 V logic-level signals if the load current stays modest.
ROHS3 compliant.
