Sourcing and lifecycle — still in active production
Gate drive and logic compatibility
The drive voltage range for achieving the rated on-resistance is 2.5 V to 4.5 V, with the 47 mOhm figure specified at 4.5 V.
CSD25213W10 P-Channel MOSFET, 20V, 1.6A, 4-DSBGA
MPNCSD25213W10
End of Life
Texas Instruments NexFET™ series, P-Channel MOSFET, 20 V drain-source, 1.6 A continuous drain, 47 mOhm on-resistance at 4.5 V, 4-DSBGA (1x1) package, -55°C to 150°C junction temperature.
$0.47Ref. price · indicative, final on quote
Packaging4-UFBGA, DSBGA
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 1.6A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -6V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 47mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 2.9 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 478 pF @ 10 V |
Product details
Frequently asked questions
Is CSD25213W10 compatible with 3.3V logic?
Yes. The drive voltage range (2.5 V to 4.5 V) includes 3.3 V. At 3.3 V gate drive the on-resistance will be higher than the 47 mOhm specified at 4.5 V, but for loads under 1 A the increase is manageable. Stay within the -6 V maximum gate-source rating.