Texas Instruments NexFET™ series, P-Channel MOSFET, 20 V drain-source, 1.6 A continuous drain, 47 mOhm on-resistance at 4.5 V, 4-DSBGA (1x1) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | P-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 1.6A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -6V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 47mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 2.9 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 478 pF @ 10 V |
The CSD25213W10 carries an Active product status per Texas Instruments, with ROHS3 compliance. There is no last-time-buy notice or NRND flag on this part, so it remains a valid choice for new designs and production builds.
The drive voltage range for achieving the rated on-resistance is 2.5 V to 4.5 V, with the 47 mOhm figure specified at 4.5 V.
Yes. The drive voltage range (2.5 V to 4.5 V) includes 3.3 V. At 3.3 V gate drive the on-resistance will be higher than the 47 mOhm specified at 4.5 V, but for loads under 1 A the increase is manageable. Stay within the -6 V maximum gate-source rating.