CSD25211W1015
Texas Instruments · NexFET™ Series
MOSFET P-CH 20V 3.2A 6DSBGA
[IN STOCK] In Stock: 242 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -6V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 33mOhm @ 1.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 4.1 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 570 pF @ 10 V |
CSD25211W1015
[ALLOC] verified