CSD23285F5

Texas Instruments · FemtoFET™ Series

Texas Instruments FemtoFET™ P-Channel MOSFET, CSD23285F5, 12 V Vds, 5.4 A Id, 35 mOhm Rds(on) at 4.5 V, 3-PICOSTAR package, -55°C to 150°C junction temperature.

Texas Instruments CSD23285F5
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD23285F5 specifications
Parameter / AttributeSpecification / Value
SeriesFemtoFET™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C5.4A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs-6V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 1A, 4.5V
Gate charge (Qg) (Max) @ vgs4.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds628 pF @ 6 V

Technical details

Small P-channel for tight spaces

35 mOhm on-resistance — what it means on a tiny footprint

With a maximum Rds(on) of 35 mOhm at 1 A and 4.5 V gate drive, this part keeps conduction losses low enough that the 500 mW power dissipation limit of the 3-XFDFN package is the real constraint, not the silicon. At 5.4 A the die can handle the current, but the package can only shed 500 mW — so in practice you derate for ambient temperature or use pulsed duty.

Temperature range that covers the harsh stuff

The wide range also gives headroom for self-heating in a cramped enclosure.

CSD23285F5
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