Texas Instruments NexFET™ series, P-Channel MOSFET, 8 V Vdss, 3 A continuous drain at 25°C, 19.4 mOhm Rds(on) at 4.5 V, 6-DSBGA package, -55°C to 150°C operating temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 8 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta) |
| Power dissipation | 750mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -6V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 19.4mOhm @ 1.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 6.3 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 914 pF @ 4 V |
The CSD23203WT: The Rds(on) is 19.4 mOhm maximum at 4.5 V Vgs and 1.5 A. Gate charge is 6.3 nC at 4.5 V. Input capacitance is 914 pF at 4 V Vds.
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The Rds(on) is 19.4 mOhm maximum at 4.5 V Vgs and 1.5 A drain current. That is the on-resistance you get when driving the gate with a 3.3 V or 5 V logic signal.
Yes, the CSD23203WT is ROHS3 compliant, meaning it meets the EU RoHS directive for lead-free soldering and restricted substances.