CSD23202W10T - Texas Instruments
MPNCSD23202W10T
End of Life
MOSFET P-CH 12V 2.2A 4DSBGA
$1.0Ref. price · indicative, final on quote
Packaging4-UFBGA, DSBGA
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.2A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | -6V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 53mOhm @ 500mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 3.8 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 512 pF @ 6 V |