CSD22206W

Texas Instruments

MOSFET P-CH 8V 5A 9DSBGA

Texas Instruments CSD22206W
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD22206W specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power dissipation1.7W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs-6V
TechnologyMOSFET (Metal Oxide)
Case9-UFBGA, DSBGA
Vgs(th) (Max) @ id1.05V @ 250µA
Rds on (Max) @ id, vgs5.7mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs14.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2275 pF @ 4 V
CSD22206W
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