Texas Instruments NexFET N-Channel MOSFET, 100 V drain-source, 100 A continuous drain current, 4.9 mOhm max Rds(on) at 10 V gate drive, 62 nC gate charge, 8-PowerTDFN (VSON-CLIP 5x6) package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 3.1W (Ta), 195W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.9mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 62 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4810 pF @ 50 V |
The CSD19532Q5BT NexFET N-channel MOSFET has a 4.9 mOhm Rds(on) at 10 V gate drive.
The 8-PowerTDFN package (5x6 mm VSON-CLIP) uses a large copper pad on the bottom for heat sinking and a low-inductance clip for the drain connection. That clip keeps the source-loop inductance low, which reduces ringing in hard-switching topologies like synchronous buck converters.
It is ROHS3 compliant.
Engineers need verified electrical parameters for design validation.
Buyers need to source the part quickly from reliable distributors.
Pricing affects BOM cost and sourcing decisions.
Inventory status determines lead time and availability for production.
Designers and buyers need drop-in alternatives for second sourcing or constrained supply.
Specs ensure the MOSFET meets application requirements for voltage, current, and power dissipation.