Texas Instruments NexFET N-Channel MOSFET, 100 V drain-source, 100 A continuous drain current, 4.9 mOhm max Rds(on) at 10 V gate drive, 62 nC gate charge, 8-PowerTDFN (VSON-CLIP 5x6) package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 3.1W (Ta), 195W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.9mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 62 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4810 pF @ 50 V |
The 8-PowerTDFN package (5x6 mm VSON-CLIP) uses a large copper pad on the bottom for heat sinking and a low-inductance clip for the drain connection. That clip keeps the source-loop inductance low, which reduces ringing in hard-switching topologies like synchronous buck converters.
It is ROHS3 compliant.
Engineers need verified electrical parameters for design validation.
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Specs ensure the MOSFET meets application requirements for voltage, current, and power dissipation.