Texas Instruments NexFET™ N-Channel MOSFET, 80 V drain-to-source, 200 A continuous drain, 3.1 mOhm Rds(on) at 10 V, DDPAK/TO-263-3 package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Ta) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Vgs(th) (Max) @ id | 3.2V @ 250µA |
| Rds on (Max) @ id, vgs | 3.1mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 76 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7920 pF @ 40 V |
The CSD19505KTT: Maximum gate charge of 76 nC at 10 V. Drive voltage window is 6 V to 10 V for rated Rds(on). Input capacitance is 7920 pF at 40 V drain-source.
DDPAK/TO-263-3 package with large exposed drain tab. 300 W maximum power dissipation requires adequate heatsinking.
ROHS3 compliant. No last-time-buy notice or end-of-life announcement.
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