CSD18541F5

Texas Instruments · FemtoFET™ Series

MOSFET N-CH 60V 2.2A 3PICOSTAR

Texas Instruments CSD18541F5
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD18541F5 specifications
Parameter / AttributeSpecification / Value
SeriesFemtoFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.2A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, No Lead
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds777 pF @ 30 V
CSD18541F5
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