Texas Instruments NexFET N-Channel MOSFET, 60 V Vdss, 1.6 mOhm Rds(on) max at 10 V, 349 A continuous drain (Tc), 140 nC gate charge, D2PAK-3 (TO-263), -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Ta), 349A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 1.6mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11430 pF @ 30 V |
Input capacitance (Ciss) is 11430 pF at 30 V drain-source.
The D2PAK (TO-263) package has a large copper tab that carries the drain current and conducts heat to the PCB or heatsink. Maximum power dissipation is 375 W at case temperature.
The drive voltage range for rated Rds(on) is 4.5 V to 10 V.