Skip to main content
Log in
Texas Instruments CSD18532NQ5B

CSD18532NQ5B NexFET N-Ch 60V 22A/100A MOSFET, 3.4mOhm

MPNCSD18532NQ5B
End of Life

Texas Instruments NexFET™ series, CSD18532NQ5B, N-Channel MOSFET, 60V Vdss, 22A (Ta) / 100A (Tc) continuous drain, 3.4mOhm max Rds(on) @ 10V, 64nC gate charge, 8-PowerTDFN / 8-VSON-CLIP (5x6) package, -55°C to 150°C junction temperature.

$2.6Ref. price · indicative, final on quote
Texas Instruments CSD18532NQ5B datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CSD18532NQ5B specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C22A (Ta), 100A (Tc)
Power dissipation3.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.4V @ 250µA
Rds on (Max) @ id, vgs3.4mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5340 pF @ 30 V

Product details

NexFET N-channel at 60 V — what the ratings mean for the load

The CSD18532NQ5B is a 60 V N-channel NexFET from Texas Instruments, rated for 22 A continuous drain at 25 °C ambient (Ta) and 100 A at the case (Tc). At 10 V drive the FET is fully enhanced; at 6 V it still meets the max Rds(on) spec, which matters if your gate-driver supply is a 6 V rail.

The ROHS3 compliance and the absence of any restricted-substance exemptions simplify compliance for EU and global BOMs.

It is a current-production part, available through independent distribution.

Frequently asked questions

What is the Rds(on) of the CSD18532NQ5B?

The maximum on-resistance is 3.4 mOhm at 25 A drain current with a 10 V gate drive. The part also specifies a maximum Rds(on) at 6 V drive, so it works with lower gate-drive rails.

What is the gate charge of the CSD18532NQ5B?

The maximum gate charge is 64 nC at 10 V gate-source voltage. This moderate Qg value means a standard gate-driver IC with a few amps of peak current can switch this FET in the tens to hundreds of kilohertz range.

Is the CSD18532NQ5B lead-free and ROHS compliant?

Yes, the CSD18532NQ5B is ROHS3 Compliant, meaning it meets the latest EU restriction of hazardous substances directive with no exemptions.

Is the CSD18532NQ5B equivalent to the CSD18534NQ5B?

The CSD18532NQ5B and CSD18534NQ5B are both 60 V NexFET N-channel MOSFETs in the same 8-VSON-CLIP package. The CSD18534 typically has a lower Rds(on) and higher current rating — check the specific datasheet for the exact differences in on-resistance and gate charge to confirm fit for your load current and switching frequency.

Can I use the CSD18532NQ5B as a replacement for an IRFZ44N?

The IRFZ44N is a 55 V, 49 A TO-220 N-channel MOSFET with a typical Rds(on) around 17.5 mOhm. The CSD18532NQ5B has a lower Rds(on) (3.4 mOhm) and higher current capability (100 A Tc), but it is a surface-mount 8-VSON-CLIP part, not a through-hole TO-220. The electrical performance is superior, but the footprint and thermal management approach are completely different — a direct drop-in replacement is not possible without a board redesign.