CSD18532NQ5B

Texas Instruments · NexFET™ Series

Texas Instruments NexFET™ series, CSD18532NQ5B, N-Channel MOSFET, 60V Vdss, 22A (Ta) / 100A (Tc) continuous drain, 3.4mOhm max Rds(on) @ 10V, 64nC gate charge, 8-PowerTDFN / 8-VSON-CLIP (5x6) package, -55°C to 150°C junction temperature.

Texas Instruments CSD18532NQ5B
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD18532NQ5B specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C22A (Ta), 100A (Tc)
Power dissipation3.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.4V @ 250µA
Rds on (Max) @ id, vgs3.4mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5340 pF @ 30 V

Technical details

NexFET N-channel at 60 V — what the ratings mean for the load

The CSD18532NQ5B is a 60 V N-channel NexFET from Texas Instruments, rated for 22 A continuous drain at 25 °C ambient (Ta) and 100 A at the case (Tc). At 10 V drive the FET is fully enhanced; at 6 V it still meets the max Rds(on) spec, which matters if your gate-driver supply is a 6 V rail.

The ROHS3 compliance and the absence of any restricted-substance exemptions simplify compliance for EU and global BOMs.

It is a current-production part, available through independent distribution.

CSD18532NQ5B
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