CSD18512Q5B

Texas Instruments · NexFET™ Series

Texas Instruments NexFET N-Channel MOSFET, CSD18512Q5B, 40 V Vds, 211 A continuous drain, 1.6 mOhm Rds(on) at 10 V, 8-VSON-CLIP (5x6) package, -55°C to 150°C junction.

Texas Instruments CSD18512Q5B
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD18512Q5B specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C211A (Tc)
Power dissipation139W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs1.6mOhm @ 30A, 10V
Input capacitance (Ciss) (Max) @ vds7120 pF @ 20 V

Technical details

CSD18512Q5B
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