CSD18511Q5AT

Texas Instruments · NexFET™ Series

MOSFET N-CH 40V 159A 8VSON

Texas Instruments CSD18511Q5AT
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[IN STOCK] In Stock: 49 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD18511Q5AT specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C159A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.45V @ 250µA
Rds on (Max) @ id, vgs3.5mOhm @ 24A, 4.5V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5850 pF @ 10 V
CSD18511Q5AT
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