Texas Instruments NexFET™ series, CSD18511KCS, N-Channel MOSFET, 40V Vdss, 194A Id, 2.6mOhm Rds(on) at 10V, TO-220-3 package, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 194A (Ta) |
| Power dissipation | 188W (Ta) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.4V @ 250µA |
| Rds on (Max) @ id, vgs | 2.6mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 64 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5940 pF @ 20 V |
With 2.6 mOhm Rds(on) at 10 V gate drive and 100 A drain current, this part is optimized for fully enhanced operation. The drive voltage range is specified from 4.5 V to 10 V.
The CSD18511KCS is an active, current-production part per Texas Instruments lifecycle status. ROHS3 compliant. No last-time-buy or obsolescence notices are in effect.
The maximum Rds(on) is 2.6 mOhm at 10 V gate drive with 100 A drain current.
It can be driven from a 4.5 V logic rail, but the minimum Rds(on) is achieved at 10 V. For full performance, use a 10 V gate drive.