CSD18504KCS

Texas Instruments · NexFET™ Series

Texas Instruments NexFET™ N-Channel MOSFET, CSD18504KCS, 40 V Vds, 7 mOhm Rds(on) at 10 V, 100 A continuous drain, TO-220-3 package, -55°C to 150°C.

Texas Instruments CSD18504KCS
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Technical specifications

CSD18504KCS specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C53A (Ta), 100A (Tc)
Power dissipation115W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 20 V

Technical details

7 mOhm at 10 V — the conduction loss floor

That on-resistance sets the conduction loss in a 12 V or 24 V power path — at 40 A the dissipation is 11.2 W, well within the 115 W package limit when the TO-220 tab is properly heatsunk.

Input capacitance is 1800 pF at 20 V Vds — the Miller plateau is short, so the switching losses stay modest in hard-switched topologies like synchronous buck converters or motor H-bridges.

Current rating and thermal headroom

Continuous drain current is rated 53 A at 25 °C ambient (Ta) and 100 A at 25 °C case (Tc).

It is ROHS3 compliant.

CSD18504KCS
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