Texas Instruments NexFET™ series, N-Channel MOSFET, 40V Vdss, 100A continuous drain, 2.3mOhm Rds(on) at 10V, 33nC gate charge, 8-VSON-CLIP (5x6mm) surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 3.2W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 5070 pF @ 20 V |
The CSD18502Q5BT: Total gate charge is 33 nC at 4.5 V. The optimum drive is 10 V, where the 2.3 mOhm figure is specified.
The CSD18502Q5BT is listed as Active by Texas Instruments. It is ROHS3 compliant, which covers the full ten restricted substances including the four phthalates.
Maximum on-resistance is 2.3 mOhm at 30 A drain current with 10 V gate drive.
Yes, it is ROHS3 compliant, covering all ten restricted substances including phthalates.
Continuous drain current is 100 A at 25°C case temperature, package-limited.
No, it is listed as Active by Texas Instruments with no end-of-life notification.
Total gate charge is 33 nC at 4.5 V gate-source voltage.