Gate charge and drive voltage — the switching side
The CSD18502Q5BT: Total gate charge is 33 nC at 4.5 V. The optimum drive is 10 V, where the 2.3 mOhm figure is specified.
CSD18502Q5BT NexFET N-Ch MOSFET, 40V, 100A, 2.3mOhm
MPNCSD18502Q5BT
End of Life
Texas Instruments NexFET™ series, N-Channel MOSFET, 40V Vdss, 100A continuous drain, 2.3mOhm Rds(on) at 10V, 33nC gate charge, 8-VSON-CLIP (5x6mm) surface-mount package, -55°C to 150°C junction temperature.
$3.09Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 3.2W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 5070 pF @ 20 V |
Product details
Frequently asked questions
What is the Rds(on) of CSD18502Q5BT?
Maximum on-resistance is 2.3 mOhm at 30 A drain current with 10 V gate drive.
Is CSD18502Q5BT RoHS compliant?
Yes, it is ROHS3 compliant, covering all ten restricted substances including phthalates.
What is the maximum drain current of CSD18502Q5BT?
Continuous drain current is 100 A at 25°C case temperature, package-limited.
Is CSD18502Q5BT obsolete?
No, it is listed as Active by Texas Instruments with no end-of-life notification.
What is the gate charge of CSD18502Q5BT?
Total gate charge is 33 nC at 4.5 V gate-source voltage.