Texas Instruments NexFET™ series, N-Channel MOSFET, 30 V Vdss, 3.4 mOhm max Rds(on) at 10 V, 24 A (Ta) / 123 A (Tc), 8-PowerTDFN / 8-VSONP (5x6) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Ta), 123A (Tc) |
| Power dissipation | 3.1W (Ta), 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.7V @ 250µA |
| Rds on (Max) @ id, vgs | 3.4mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 54 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3640 pF @ 15 V |
The 83 W power dissipation at the case (Tc) assumes a proper thermal interface to a heatsink or PCB copper plane; the 3.1 W at ambient (Ta) is the free-air limit — derate from there if the board is in a sealed enclosure.
No last-time-buy or end-of-life notice is on record for this order code.
Yes, the part is ROHS3 compliant.