Texas Instruments NexFET™ N-Channel MOSFET, 30V Vdss, 25A Id, 6.9mOhm Rds(on) @ 10V, 8-PowerTDFN / 8-VSONP (5x6) package, -55°C to 150°C junction temp.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Ta) |
| Power dissipation | 3.1W (Ta), 42W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.9V @ 250µA |
| Rds on (Max) @ id, vgs | 6.9mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1510 pF @ 15 V |
On-resistance sits at 6.9 mOhm typical with a 10 V gate drive, and the gate charge is 22.3 nC at 10 V.
Surface-mount in an 8-PowerTDFN (5x6 mm) footprint.
ROHS3 compliant — no lead, no restricted substances beyond the exemption list. The NexFET series is an established TI power MOSFET family with consistent supply.
Within the NexFET family, TI offers several 30 V N-channel FETs in the same 8-VSONP package, but the exact Rds(on) and gate charge differ. For a direct drop-in, check the CSD17577Q5A or CSD17573Q5A — same footprint, similar ratings, but verify the Rds(on) and gate charge against your load current and switching frequency. No single 'replacement' is guaranteed without reviewing the full datasheet curves.
Yes, it is ROHS3 compliant, meaning no restricted substances above the exemption thresholds. Suitable for RoHS-driven BOMs without lead-exemption paperwork.
The operating junction temperature range is -55°C to 150°C. This covers military, automotive under-hood, and industrial environments where ambient temperatures can exceed 85°C.