Texas Instruments · NexFET™ Series
TI NexFET™ N-Channel MOSFET, 30V Vdss, 100A Id, 2mOhm Rds(on) at 10V, 68nC Qg, 8-PowerTDFN (5x6mm VSONP), -55 to 150°C junction temp.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 3.1W (Ta), 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4430 pF @ 15 V |
The CSD17576Q5B: The 8-PowerTDFN (VSONP 5x6 mm) is a low-profile, surface-mount package with an exposed drain pad on the bottom. Maximum power dissipation is 3.1 W in still air at 25°C ambient, rising to 125 W when the case is held at 25°C.
No last-time-buy or end-of-life notices are on record.
