Texas Instruments NexFET™ N-Channel MOSFET, 30V Vds, 40A (Ta) / 100A (Tc) continuous drain, 1.15mOhm max Rds(on) at 10V, 8-PowerTDFN / 8-VSON-CLIP (5x6) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Ta), 100A (Tc) |
| Power dissipation | 3.2W (Ta), 96W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.7V @ 250µA |
| Rds on (Max) @ id, vgs | 1.15mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 51 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 9200 pF @ 15 V |
N-channel NexFET power MOSFET rated for 30 V drain-to-source and 100 A continuous drain current at the case temperature. On-resistance is 1.15 mOhm max at 10 V gate drive.
Rds(on) is 1.15 mOhm at 10 V. Power dissipation is 3.2 W (Ta) and 96 W (Tc). Gate charge is 51 nC at 4.5 V; input capacitance is 9200 pF at 15 V.
Lifecycle status is Active. ROHS3 compliant. No last-time-buy notice.
TI's NexFET family includes several 30 V N-channel FETs in the 5x6 VSON-CLIP package, but the CSD17559Q5 is distinguished by its 1.15 mOhm Rds(on) at 10 V. A direct cross-reference would need to match the 8-VSON-CLIP footprint and the 30 V / 100 A rating — no single official second-source alternate is listed in the available records.
The junction temperature range is -55°C to 150°C. Power dissipation is rated at 3.2 W in still air at 25°C ambient and 96 W at the case. The 8-VSON-CLIP package relies on the PCB copper pour for heat spreading — a thermal via array under the exposed pad is expected for designs approaching the 100 A continuous rating.