CSD17527Q5A

Texas Instruments · NexFET™ Series

Texas Instruments NexFET™ series, N-Channel MOSFET, 30 V Vdss, 65 A continuous drain (Tc), 10.8 mOhm Rds(on) at 11 A, 10 V, 3.4 nC gate charge, 8-PowerTDFN (VSONP 5x6), -55 to 150 °C junction.

Texas Instruments CSD17527Q5A
Download datasheet (PDF)
[IN STOCK] In Stock: 21 pcs
$1.22/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD17527Q5A specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C65A (Tc)
Power dissipation3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs10.8mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs3.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds506 pF @ 15 V

Technical details

The Texas Instruments CSD17527Q5A is a 30 V N-channel NexFET power MOSFET in a 8-PowerTDFN package (VSONP 5x6). It is designed for low-voltage, high-efficiency power switching in applications such as point-of-load converters, motor drives, and battery management.

Gate charge is 3.4 nC at 4.5 V. Input capacitance is 506 pF at 15 V Vds.

It is ROHS3 Compliant, with no lead or restricted substances above threshold. No NRND or EOL notice has been issued for this part, so it remains a safe selection for new BOMs and production builds.

Sourcing posture

CSD17527Q5A
[ALLOC] verified
Quote