Rds(on) and package power — the derating reality
At 3 A, the 121 mOhm Rds(on) produces conduction loss above the 500 mW package power dissipation rating. Continuous 3 A requires aggressive thermal management or pulsed operation.
CSD17484F4
Texas Instruments · FemtoFET™ Series
Texas Instruments FemtoFET™ series, CSD17484F4, N-Channel MOSFET, 30V Vdss, 3A Id, 121mOhm Rds(on) @ 500mA/8V, 1.2nC Qg, 3-PICOSTAR surface mount, -55°C to 150°C.
[IN STOCK] In Stock: 5,825 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | FemtoFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 8V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | 12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XFDFN |
| Vgs(th) (Max) @ id | 1.1V @ 250µA |
| Rds on (Max) @ id, vgs | 121mOhm @ 500mA, 8V |
| Gate charge (Qg) (Max) @ vgs | 1.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 195 pF @ 15 V |
Technical details
CSD17484F4
[ALLOC] verified