Skip to main content
Log in
Texas Instruments CSD17483F4

CSD17483F4 NexFET N-Ch MOSFET, 30V 1.5A, 3-PICOSTAR

MPNCSD17483F4
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, 30 V drain-source, 1.5 A continuous drain, 240 mOhm Rds(on) at 500 mA / 8 V, 3-PICOSTAR surface-mount package, -55°C to 150°C junction temperature.

$0.45Ref. price · indicative, final on quote
Texas Instruments CSD17483F4 datasheet (PDF)
Packaging3-XFDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CSD17483F4 specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C1.5A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs12V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs240mOhm @ 500mA, 8V
Gate charge (Qg) (Max) @ vgs1.3 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds190 pF @ 15 V

Product details

The CSD17483F4 is fully specified for gate drive voltages as low as 1.8 V, with a maximum threshold voltage of 1.1 V at 250 µA. The gate charge is only 1.3 nC at 4.5 V, so the switching losses stay negligible even if the GPIO is toggling at a few hundred kHz. Input capacitance of 190 pF at 15 V drain-source confirms the gate load is light enough for a standard push-pull output.

The part is suitable for engine-bay electronics, outdoor telecom enclosures, or any environment where the board sees thermal cycling. ROHS3 compliant per the current revision.

No NRND or EOL notice is on record.

Frequently asked questions

What is the Rds(on) of the CSD17483F4?

Maximum on-resistance is 240 mOhm at 500 mA drain current with 8 V gate drive. The part is also specified at 1.8 V and 4.5 V drive voltages, with the lowest Rds(on) achieved at 4.5 V or higher.